white microelectronics ? phoenix, az ? (602) 437-1520 7 flash modules 1 128kx64 5v flash module preliminary* features n access times of 60, 70, 90, 120, 150ns n packaging ? 116 lead, 40mm square, hermetic cqfp (package 504) n sector architecture ? 8 equal size sectors of 16kbytes each ? any combination of sectors can be concurrently erased. also supports full chip erase n 100,000 erase/program cycles minimum (0 c to 70 c) n data retention, 10 year minimum at 125 c n organized as 128kx64, user configurable as 256kx32, 512kx16 or 1mx8. WF128K64-XG4WX5 n commercial, industrial and military temperature ranges n 5 volt programming; 5v ( 10%) supply n low power cmos, 8ma standby typical n hardware and software write protection n ttl compatible inputs and outputs n built-in decoupling caps and multiple ground pins for low noise operation n weight WF128K64-XG4WX5 - 20 grams typical * this data sheet describes a product under development and is subject to change without notice. note: programming information available upon request. fig. 1 pin configuration for WF128K64-XG4WX5 1 128k x 8 8 i/o 0-7 cs 1 2 128k x 8 8 i/o 8-15 cs 2 8 i/o... cs x 8 128k x 8 8 i/o 56-63 cs 8 a 0-16 oe we 1 we 2 we x we 8 ...... block diagram 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 116 115 114 113 112 111 110 109 108 107 106 105 104 103 i/o 3 i/o 4 i/o 5 i/o 6 i/o 7 gnd i/o 8 i/o 9 i/o 10 i/o 11 i/o 12 i/o 13 i/o 14 i/o 15 gnd i/o 16 i/o 17 i/o 18 i/o 19 i/o 20 i/o 21 i/o 22 i/o 23 gnd i/o 24 i/o 25 i/o 26 i/o 27 i/o 28 i/o 29 i/o 30 i/o 31 v cc we 3 cs 3 nc nc nc nc a 16 a 15 we 4 cs 4 oe cs 5 we 5 a 14 a 13 a 12 a 11 a 10 nc cs 6 we 6 v cc i/o 32 i/o 33 i/o 34 i/o 60 i/o 59 i/o 58 i/o 57 i/o 56 gnd i/o 55 i/o 54 i/o 53 i/o 52 i/o 51 i/o 50 i/o 49 i/o 48 gnd i/o 47 i/o 46 i/o 45 i/o 44 i/o 43 i/o 42 i/o 41 i/o 40 gnd i/o 39 i/o 38 i/o 37 i/o 36 i/o 35 i/o 2 i/o 1 i/o 0 v cc we 2 cs 2 nc a 0 a 1 a 2 a 3 a 4 we 1 cs 1 nc cs 8 we 8 a 5 a 6 a 7 a 8 a 9 nc cs 7 we 7 v cc i/o 63 i/o 62 i/o 61 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 102 101 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76 75 74 top view i/o 0-63 data inputs/outputs a 0-16 address inputs we 1-8 write enables cs 1-8 chip selects oe output enable v cc power supply gnd ground nc not connected pin description september 1998
2 white microelectronics ? phoenix, az ? (602) 437-1520 7 flash modules WF128K64-XG4WX5 absolute maximum ratings (1) notes: 1. stresses above the absolute maximum rating may cause permanent damage to the device. extended operation at the maximum levels may degrade performance and affect reliability. 2. minimum dc voltage on input or i/o pins is -0.5v. during voltage transitions, inputs may overshoot v ss to -2.0 v for periods of up to 20ns. maximum dc voltage on output and i/o pins is v cc + 0.5v. during voltage transitions, outputs may overshoot to vcc + 2.0 v for periods of up to 20ns. 3. minimum dc input voltage on a 9 pin is -0.5v. during voltage transitions, a 9 may overshoot vss to -2v for periods of up to 20ns. maximum dc input voltage on a 9 is +13.5v which may overshoot to 14.0 v for periods up to 20ns. dc characteristics - cmos compatible (v cc = 5.0v, v ss = 0v, t a = -55 c to +125 c) notes: 1. the i cc current listed includes both the dc operating current and the frequency dependent component (at 5 mhz). the frequency component typically is less than 2 ma/mhz, with oe at v ih . 2. i cc active while embedded algorithm (program or erase) is in progress. 3. dc test conditions: v il = 0.3v, v ih = v cc - 0.3v recommended operating conditions parameter symbol min max unit supply voltage v cc 4.5 5.5 v input high voltage v ih 2.0 v cc + 0.3 v input low voltage v il -0.5 +0.8 v operating temp. (mil.) t a -55 +125 c a 9 voltage for sector protect v id 11.5 12.5 v parameter unit operating temperature -55 to +125 c supply voltage range (v cc ) -2.0 to +7.0 v signal voltage range (any pin except a9) (2) -2.0 to +7.0 v storage temperature range -65 to +150 c lead temperature (soldering, 10 seconds) +300 c data retention mil temp 10 years endurance (write/erase cycles) mil temp 10,000 cycles min. a 9 voltage for sector protect (v id ) (3) -2.0 to +14.0 v capacitance (t a = +25 c) parameter symbol conditions max unit oe capacitance c oe v in = 0 v, f = 1.0 mhz 100 pf we capacitance c we v in = 0 v, f = 1.0 mhz 20 pf cs capacitance c cs v in = 0 v, f = 1.0 mhz 20 pf data i/o capacitance c i/o v i/o = 0 v, f = 1.0 mhz 20 pf address input capacitance c ad v in = 0 v, f = 1.0 mhz 100 pf this parameter is guaranteed by design but not tested. parameter symbol conditions min max unit input leakage current i li v cc = 5.5, v in = gnd to v cc 10 m a output leakage current i lox32 v cc = 5.5, v in = gnd to v cc 10 m a v cc active current for read (1) i cc1 cs = v il , oe = v ih 280 ma v cc active current for program or erase (2) i cc2 cs = v il , oe = v ih 400 ma v cc standby current i cc3 v cc = 5.5, cs = v ih , f = 5mhz 13 ma v cc static current i cc4 v cc = 5.5, cs = v ih 1.2 ma output low voltage v ol i ol = 12.0 ma, v cc = 4.5 0.45 v output high voltage v oh1 i oh = -2.5 ma, v cc = 4.5 0.85 x v v cc output high voltage v oh2 i oh = -100 m a, v cc = 4.5 v cc v -0.4 low v cc lock out voltage v lko 3.2 v
white microelectronics ? phoenix, az ? (602) 437-1520 7 flash modules 3 WF128K64-XG4WX5 ac characteristics C write/erase/program operations, we controlled (v cc = 5.0v, v ss = 0v, t a = -55 c to +125 c) parameter symbol -60 -70 -90 -120 -150 unit min max min max min max min max min max write cycle time t avav t wc 60 70 90 120 150 ns chip select setup time t elwl t cs 000 00ns write enable pulse width t wlwh t wp 30 35 45 50 50 ns address setup time t avwl t as 000 00ns data setup time t dvwh t ds 30 30 45 50 50 ns data hold time t whdx t dh 000 00ns address hold time t wlax t ah 45 45 45 50 50 ns chip select hold time t wheh t ch 000 00ns write enable pulse width high t whwl t wph 20 20 20 20 20 ns duration of byte programming operation (min) t whwh1 14 14 14 14 14 m s chip and sector erase time t whwh2 2.2 60 2.2 60 2.2 60 2.2 60 2.2 60 sec read recovery time before write t ghwl 000 00ns v cc setup time t vcs 50 50 50 50 50 m s chip programming time 12.5 12.5 12.5 12.5 12.5 sec output enable setup time t oes 0000 0ns output enable hold time (1) t oeh 10 10 10 10 10 ns 1. for toggle and data polling. ac characteristics C read only operations (v cc = 5.0v, v ss = 0v, t a = -55 c to +125 c) parameter symbol -60 -70 -90 -120 -150 unit min max min max min max min max min max read cycle time t avav t rc 60 70 90 120 150 ns address access time t avqv t acc 60 70 90 120 150 ns chip select access time t elqv t ce 60 70 90 120 150 ns oe to output valid t glqv t oe 30 35 40 50 55 ns chip select to output high z (1) t ehqz t df 20 20 25 30 35 ns oe high to output high z (1) t ghqz t df 20 20 25 30 35 ns output hold from address, cs or oe change, t axqx t oh 00000ns whichever is first 1. guaranteed by design, not tested.
4 white microelectronics ? phoenix, az ? (602) 437-1520 7 flash modules WF128K64-XG4WX5 ac characteristics C write/erase/program operations, cs controlled (v cc = 5.0v, v ss = 0v, t a = -55 c to +125 c) parameter symbol -60 -70 -90 -120 -150 unit min max min max min max min max min max write cycle time t avav t wc 60 70 90 120 150 ns we setup time t wlel t ws 0 0000ns cs pulse width t eleh t cp 30 35 45 50 50 ns address setup time t avel t as 0 0000ns data setup time t dveh t ds 30 30 45 50 50 ns data hold time t ehdx t dh 0 0000ns address hold time t elax t ah 45 45 45 50 50 ns we hold from we high t ehwh t wh 0 0000ns cs pulse width high t ehel t cph 20 20 20 20 20 ns duration of programming operation t whwh1 14 14 14 14 14 m s duration of erase operation t whwh2 2.2 60 2.2 60 2.2 60 2.2 60 2.2 60 sec read recovery before write t ghel 0 0000ns chip programming time 12.5 12.5 12.5 12.5 12.5 sec
white microelectronics ? phoenix, az ? (602) 437-1520 7 flash modules 5 WF128K64-XG4WX5 fig. 2 ac waveforms for read operations addresses cs oe we outputs high z addresses stable t oe t rc output valid t ce t acc t oh high z t df
6 white microelectronics ? phoenix, az ? (602) 437-1520 7 flash modules WF128K64-XG4WX5 fig. 3 write/erase/program operation, we controlled notes : 1. pa is the address of the memory location to be programmed. 2. pd is the data to be programmed at byte address. 3. d 7 is the output of the complement of the data written to each chip. 4. d out is the output of the data written to the device. 5. figure indicates last two bus cycles of four bus cycle sequence. addresses cs oe we data 5.0 v 5555h pa pa t wc t cs pd d 7 d out t ah t wph t dh t ds data polling t as t rc t wp a0h t oe t df t oh t ce t ghwl t whwh1
white microelectronics ? phoenix, az ? (602) 437-1520 7 flash modules 7 WF128K64-XG4WX5 fig. 4 ac waveforms chip/sector erase operations notes: 1. sa is the sector address for sector erase. addresses cs oe we data v cc 5555h 2aaah 2aaah sa 5555h 5555h t wp t cs t vcs 10h/30h 55h 80h 55h aah aah t ah t as t ghwl t wph t dh t ds
8 white microelectronics ? phoenix, az ? (602) 437-1520 7 flash modules WF128K64-XG4WX5 fig. 5 ac waveforms for data polling during embedded algorithm operations cs oe we t oe t ce t ch t oh d7 d7 = valid data high z d0-d6 = invalid d0-d7 valid data t df d7 d0-d6 t oeh t whwh 1 or 2 t oe data
white microelectronics ? phoenix, az ? (602) 437-1520 7 flash modules 9 WF128K64-XG4WX5 fig. 6 write/erase/program operation, cs controlled notes: 1. pa represents the address of the memory location to be programmed. 2. pd represents the data to be programmed at byte address. 3. d 7 is the output of the complement of the data written to each chip. 4. d out is the output of the data written to the device. 5. figure indicates the last two bus cycles of a four bus cycle sequence. addresses we oe cs data 5.0 v 5555h pa pa t wc t ws pd d 7 d out t ah t cph t cp t dh t ds data polling t as t ghel a0h t whwh1
10 white microelectronics ? phoenix, az ? (602) 437-1520 7 flash modules WF128K64-XG4WX5 v pp programming voltage 5 = 5v device grade: m = military screened -55 c to +125 c i = industrial -40 c to +85 c c = commercial 0 to + 70 c package type: g4w = 116 lead 40mm ceramic quad flat pack, cqfp (package 504) access time (ns) organization, 128k x 64 user configurable as 256k x 32, 512k x 16, or 1m x 8 flash prom white microelectronics ordering information package 504: 116 lead, ceramic quad flat pack, cqfp (g4w) all linear dimensions are millimeters and parenthetically in inches 38 (1.50) ref 4 places 0.38 (0.015) 0.08 (0.003) 68 places 1.27 (0.050) ref 5.1 (0.200) 0.25 (0.010) 4 places 39.6 (1.56) 0.38 (0.015) sq 12.7 (0.500) 0.5 (0.020) 4 places 5.1 (0.200) max 0.25 (0.010) 0.05 (0.002) 1.27 (0.050) 0.1 (0.005) pin 1 identifier pin 1 w f 128k64 - xxx g4w x 5
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